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从结构角度看,对单一事件效应和SiC VDMOS的机制的模拟研究

Tao Liu¹, Yuan Wang¹, Rongyao Ma¹

¹School of Microelectronics and Communication Engineering, Chongqing University, Chongqing 400044, China.

|May 27, 2023

概括

深沟门超连接 (DTSJ) SiC VDMOS为太空应用提供了卓越的单事件效果可靠性. 模拟显示,与其他SiC VDMOS类型相比,DTSJ显著减少了电荷收集和温度升高.

科学领域:

半导体设备物理学半导体设备物理
电子产品中的辐射效应.
太空级的材料和设备和设备.

背景情况:

单一事件效应 (SEE) 对空间应用中的碳化物 (SiC) 垂直双扩散金属氧化物半导体 (VDMOS) 晶体管提出了关键的可靠性挑战.
了解SEE特性对于确保在恶劣的太空环境中使用的动力设备的长期运行完整性至关重要.

研究的目的:

综合分析和模拟一个新型深沟门超连接 (DTSJ) 的SEE特性和机制. SiC VDMOS.
将DTSJ SiC VDMOS的SEE性能与常规沟门超连接 (CTSJ),常规沟门 (CT) 和常规平面门 (CP) SiC VDMOS进行比较.
评估DTSJ结构在缓解单事件短暂 (SET) 和单事件门断裂 (SEGR) 现象方面的有效性.

主要方法:

为了分析SEE特性,进行了广泛的设备模拟.
模拟了诸如最大SET电流峰值,排水处收集的总电荷和电荷增强因子 (CEF) 等关键参数.
在各种偏差和辐射条件下,研究了SET事件和SEGR的LET值期间的晶格温度升高.

主要成果:

与CTSJ,CT和CP设备相比,DTSJ SiC VDMOS的最大SET电流峰值 (188mA) 和总收集电荷 (320pC) 在VDS=300V和LET=120MeV·cm2/mg时明显较低.
拟议的DTSJ结构显示,CTSJ,CT和CP的收费增强因子 (CEF) 相当于43,相比之下,CTSJ,CT和CP的收费增强因子分别为160,117和55.
对于DTSJ的最大SET格子温度在广泛的操作范围 (VDS: 100-1100V, LET: 1-120 MeV·cm2/mg) 中保持在2823K以下,而其他类型的格子温度超过3100K.
DTSJ SiC VDMOS显示了显著更高的SEGR LET值约为100 MeV·cm2/mg在VDS=1100V,而CTSJ和CT则为15 MeV·cm2/mg,CP则为60 MeV·cm2/mg.

结论:

与传统的SiC VDMOS结构相比,深沟门超连接 (DTSJ) SiC VDMOS设计在单一事件影响下提供了更高的稳定性.
DTSJ结构有效地减轻了电荷收集,减少了SET期间的温度过渡,并提高了SEGR的值,使其非常适合辐射硬化空间应用.
拟议的DTSJ SiC VDMOS代表了提高功率电子在苛刻的空间环境中的可靠性的有希望的进步.

关键词:

收费增强因子 (CEF) 是指收费增强因子.线性能量转移 (LET) 是指线性能量转移.碳化 (SiC) 是一种碳化.单一事件燃烧 (SEB) 是指单一事件的燃烧.一次事件效应 (SEE)单一事件门破裂 (SEGR)一次事件的短暂变量 (SET)超级连接 (SJ) 是一个超级连接.沟沟的沟是什么意思垂直扩散金属氧化物半导体场晶体管 (VDMOS)

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