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Updated: Jul 22, 2026

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在PDSOI设备中,在恒压压力下对SILC降解的研究

Yong Lu1, Hongxia Liu1

  • 1Key Laboratory for Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China.

Micromachines
|May 27, 2023
PubMed
概括

在部分耗尽的在绝缘体 (PDSOI) 装置中,压力诱导的泄漏电流 (SILC) 降解随着通道长度的缩短而恶化,并因浮体效应而加剧. 门电压和SILC降解都遵循应力时间的功率函数.

关键词:
恒定电压压力的压力.漂浮物体设备的设备是什么部分耗尽的在绝缘体上的设备.压力诱导的泄漏电流是由于压力引起的.这是一个陷,一个陷.

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Biasing of Metal-Semiconductor Junctions01:27

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...