离子合成的氧化物纳米晶体在介电矩阵中的结构和化学成分

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Dmitry S Korolev¹, Ruslan N Kriukov^1,2, Kristina S Matyunina²

¹Research Institute of Physics and Technology, Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia.

Nanomaterials (Basel, Switzerland)

|May 27, 2023

概括

离子束合成使氧化物 (Ga2O3) 在上的介电矩阵中形成纳米晶体. 在最佳条件下,度Ga2O3超过90%,通过传输电子显微镜得到证实.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
半导体物理半导体物理

背景情况:

氧化 (Ga2O3) 是一个有前途的半导体材料.
纳米材料的合成对于先进的电子设备至关重要.
离子束合成为材料制造提供了新的途径.

研究的目的:

在SiO2/Si和Al2O3/Si中研究Ga2O3纳米晶体的离子束合成.
确定合成参数对化学成分的影响.
优化高纯度立体测量Ga2O3形成的条件.

主要方法:

的离子植入到SiO2/Si和Al2O3/Si中.
不同的离子辐射和热回火机制.
化学成分分析 (例如XPS) 和传输电子显微镜 (TEM).

主要成果:

在离子植入过程中,Ga-O化学键形成,即使没有回火.
在优化的合成条件下,可以达到>90%的静态度Ga2O3.3.
TEM证实了Ga2O3纳米晶体内含物的形成.

结论:

离子束合成是有效的Ga2O3纳米晶体制造在.
对合成参数的控制是实现高纯度Ga2O3.3的关键.
这种方法为基于氧化的新型纳米材料提供了途径.

关键词:

在X射线光电子光谱学中使用X射线光电子光谱.氧化的氧化.离子植入植入的离子植入.离子束合成离子束合成纳米晶体是一种纳米晶体.热化热化热化传输电子显微镜的使用

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