回火对基于BN的RRAM性能的影响
1Department of Semiconductor Systems Engineering, and Convergence Engineering for Intelligent Drone, Institute of Semiconductor and System IC, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea.
Nanomaterials (Basel, Switzerland)
|May 27, 2023
概括
回火显著改善了用于航空航天应用的基于化 (BN) 的电阻随机访问存储器 (RRAM). 这种增强提高了性能和可靠性,使得基于BN的RRAM成为更可行的非易失性内存 (NVM) 解决方案.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 航空航天工程 航空航天工程
背景情况:
- 基于化 (BN) 的电阻随机访问存储器 (RRAM) 是航空航天领域的一个有前途的非挥发性存储器 (NVM),因为它具有热,机械和化学稳定性.
- 基于BN的RRAM中的缺陷和陷状态可能会阻碍其在苛刻的航空航天环境中的性能和可靠性.
研究的目的:
- 调查回火对用于航空航天应用的基于BN的RRAM性能和可靠性的影响.
- 为了解决非易失性存储器设备中缺陷和陷状态所造成的限制.
主要方法:
- 基于BN的RRAM设备的制造和表征,包括非回火,回火和回火.
- 评估电气特性,包括设置电压和开/关比.
- 随着时间的推移,对数据保留能力的评估.
主要成果:
- 与非制 (1.4V) 和制 (1.23V) 设备相比,制的BN基RRAM显示较低的设置电压 (1.06V).
- 回的RRAM显示了显著更高的开/关比 (100),比非制设备高10倍.
- 观察到回RRAM的优异数据保留,保持数据完整性超过10,000秒,与其他变体不同.
结论:
- 回火是优化基于BN的RRAM的关键过程,提高了其适用于航空航天NVM的适用性.
- 改进的设置电压,打开/关闭比率和保留特性使回的BN-based RRAM成为可靠的航空航天数据存储的优秀候选人.
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