通过激光兴奋剂将电荷载体极性转换为MoTe2场效应晶体管
Hanul Kim1, Inayat Uddin2, Kenji Watanabe3
1Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea.
Nanomaterials (Basel, Switzerland)
|May 27, 2023
概括
研究人员证明了激光诱导的p型兴奋剂在二甲 (MoTe2) 场效应晶体管 (FET) 中. 这种选择性兴奋剂方法使n型MoTe2可控制转化为p型,为先进的纳米电子设备铺平了道路.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术 纳米技术
背景情况:
- 二维 (2D) 原子晶体过渡金属二甲基化物为未来的纳米电子设备提供了的有希望的替代品.
- 二化 (MoTe2) 是一种具有适用于电子应用的带隙的二维半导体.
- 在2D材料中控制电荷载体的类型 (n型或p型) 对于设备制造至关重要.
研究的目的:
- 为了证明选择性,激光诱导的p型兴奋剂在n型二甲 (MoTe2) 场效应晶体管 (FET) 中.
- 为了研究六角化在激光兴奋剂过程中作为保护性被动化层的使用.
- 探索这种兴奋剂技术在制造互补金属氧化物半导体 (CMOS) 电路方面的潜力.
主要方法:
- 使用单个纳米片制造基于MoTe2的FET.
- 六角化作为被动化层的应用.
- 使用激光照射对n型MoTe2通道进行选择性p型注.
- 在温度范围 (77-300 K) 中对设备性能进行表征.
- 用CMOS逆变器测量杂的MoTe2 FET.
主要成果:
- 成功演示了四步激光诱导的兴奋剂过程,在选择性区域将n型MoTe2转换为p型.
- 在内在的n型通道中实现了高电子流动性 (23.4 cm^2V^-1s^-1),在多的p型区域中实现了孔流动性 (0.61 cm^2V^-1s^-1).
- 在制造的设备中观察到高的开/关比.
- 证实了MoTe2 FET在一个温度范围内的内在和激光合区域的性能的一致性.
- 通过切换电荷载体极性,成功将该设备作为CMOS逆变器运行.
结论:
- 选择性激光兴奋剂是一种可行的技术,可以精确控制MoTe2 FET的导电性.
- 六角化有效地保护MoTe2结构在激光兴奋剂.
- 在MoTe2 FET中切换电荷载体极性的能力为CMOS电路集成打开了可能性.
- 这种制造工艺具有开发更大规模的基于MoTe2的CMOS电路的潜力.
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