在GaN缺陷单光子发射器中通过光学声子进行脱相
Yifei Geng1, Jialun Luo2, Len van Deurzen3
1School of Electrical and Computer Engineering, Cornell University, Ithaca, NY, 14853, USA. yg474@cornell.edu.
Scientific reports
|May 29, 2023
概括
在化 (GaN) 中的单光子发射器显示出独特的温度依赖的线宽扩展. 一种新的光学声模型解释了这种行为,对于量子应用至关重要.
科学领域:
- 量子光学和光子学 量子光学和光子学
- 材料科学与工程 材料科学与工程
- 固态物理 固态物理
背景情况:
- 宽带差半导体中的单光子发射器 (SPE) 是量子技术的关键.
- 对于量子应用来说至关重要的光子不可辨别性,受到零声子线 (ZPL) 由于脱相而扩大的限制.
- 现有的模型,通常涉及声学声子,无法解释观察到的一些SPEs中的脱相.
研究的目的:
- 调查化 (GaN) 中的SPEs的温度依赖的脱相机制.
- 了解GaN SPEs在广泛的温度范围内的零声波线 (ZPL) 的扩展.
- 开发一个解释观察到的ZPL线宽和线形温度依赖性的模型.
主要方法:
- 研究了与固体浸泡镜片集成的GaN SPEs的ZPL光谱的温度依赖性.
- 分析了ZPL线形和线宽从10K到270K的演变.
- 在弹性拉曼过程中开发和应用基于光学声子吸收/发射的模型.
主要成果:
- 在50K以下,ZPL线宽是温度独立的 (高斯形状),由光谱扩散主导.
- 在50K以上,ZPL线宽随温度单调地增加,线形演变为洛伦兹式.
- 观察到的温度依赖性偏离了典型的功率定律行为,并通过拟议的光学声模型得到了很好的解释,产生了约19 meV的声能量.
结论:
- 在50K以上的GaN SPEs中脱相是由通过弹性拉曼散射的光学声子相互作用控制的,而不是声学声子.
- 开发的模型准确地描述了从10K到270K的GaN SPEs中的ZPL线宽和线形温度依赖性.
- 这种机制可能与其他氏体III-V化物 (如hBN和AlN) 有关,影响这些材料中的SPEs.
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