动态内存根据频率调整在同类热热型液晶中
Vidya P Janaki1, S Moorthi2, M L N Madhu Mohan3
1VLSI Systems Research Lab, Department of Electrical and Electronics Engineering, National Institute of Technology, Tiruchirappalli, Tamil Nadu, 620015, India.
The European physical journal. E, Soft matter
|May 30, 2023
概括
研究人员在热热的液晶中探索了动态记忆存储. 他们发现,阴性液晶表现出动态记忆能力,为高密度记忆器件提供了潜力.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 物理化学 物理化学
背景情况:
- 当前的动态RAM和NAND内存技术面临着扩展限制.
- 对于高密度动态内存解决方案的需求日益增长.
研究的目的:
- 研究热热流体液晶在动态内存存储方面的潜力.
- 探索在一系列表现为阴性相的液晶同源系列中的动态记忆特征.
主要方法:
- 制备一个同类系列的五种热热的液晶化合物.
- 使用液晶动态内存存储设置,配有氧化 (ITO) 涂层玻璃电极.
- 进行温度依赖的介电松研究,以确定松频率.
- 在放松频率和各种场度激发液晶以记录介电歇斯底里.
主要成果:
- 所有合成的中原体都只表现出阴性阶段.
- 记录了介电歇斯底里循环,其大小与内存存储容量成正比.
- 这项研究成功地观察了在阴性液晶中的动态记忆存储.
结论:
- 阴性液晶表现出动态内存存储能力.
- 观察到的歇斯底里循环随着电场,温度和频率的变化而变化.
- 这些发现表明液晶是开发高密度动态记忆的有希望的途径.
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