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基于Hafnia的铁电材料的缺陷工程用于高耐久性内存应用

Min-Kyu Kim¹, Ik-Jyae Kim¹, Jang-Sik Lee¹

¹Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea.

|May 30, 2023

概括

在原子层沉积 (ALD) 过程中优化臭氧暴露对于高性能氧化 (HfZrO) 铁电膜至关重要. 控制的ALD过程提高了下一代内存应用的两极化和耐久性.

科学领域:

材料科学材料科学材料科学
固态物理固态物理
纳米技术纳米技术

背景情况:

用添加的氧化物 (HfZrO) 是先进记忆器件的关键铁电材料.
缺陷形成,如氧气空隙和间隙,严重影响HfZrO的铁电特性和设备耐用性.
优化沉积过程对于实现基于HfZrO的高性能内存应用是必不可少的.

研究的目的:

研究原子层沉积 (ALD) 期间臭氧暴露时间对HfZrO薄膜特性的影响.
为了将HfZrO膜中的缺陷度与极化和耐久性能相关联.
为了确定最佳的ALD臭氧暴露,以改善铁电特性和设备稳定性.

主要方法:

使用ALD制造16纳米厚的HfZrO薄膜,使用不同的臭氧暴露时间 (1秒,2.5秒,4秒).
描述HfZrO薄膜的极化和耐久性特性.
使用泄漏电流测量的缺陷度分析.

主要成果:

经过一秒钟的臭氧暴露后沉积的HfZrO薄膜显示出高缺陷度和低极化.
增加对2.5秒的臭氧暴露减少了缺陷,改善了极化.
过度暴露于臭氧 (4秒) 导致由于氧介质和单临床阶段的极化减少;2.5秒产生了最稳定的耐久性.

结论:

在ALD期间暴露于臭氧的时间显著影响HfZrO的缺陷形成和铁电特性.
2.5秒的最佳臭氧暴露通过最小化缺陷来增强极化和耐久性.
精确控制ALD参数对于优化HfZrO用于下一代内存应用至关重要.

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