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两个维的Ca₂N/MoS₂捐赠-接受器异构结构的欧姆接触

Xinxin Wang¹, Shiqiang Yu¹, Yushuo Xu¹

¹School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China. daiy60@sdu.edu.cn.

Physical chemistry chemical physics : PCCP

|May 31, 2023

概括

研究人员使用Ca2N/MoS2异构开发了一种新的二维材料接触策略. 这种方法克服了器件的局限性,为先进的电子设备提供了低电阻的欧米接触.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
纳米技术纳米技术

背景情况:

传统的基于的设备面临着缩放限制和费米级别结效应.
开发用于半导体的低电阻金属接触器对于下一代电子产品至关重要.
二维 (2D) 金属/半导体接触显示出希望,但受到Schottky和道壁垒的阻碍.

研究的目的:

提出一种新的策略,以减少2D半导体设备中的接触潜在障碍.
通过使用Ca2N/MoS2供体-受体异构结构来研究欧米接触的形成.

主要方法:

使用2D电烯材料Ca2N制造一个Ca2N/MoS2异构结构.
描述Ca2N/MoS2接口的电子特性.
分析道概率,I-V曲线和带曲以评估接触性能.

主要成果:

在Ca2N和MoS2单层之间实现了出色的n型欧米接触.
这种Ca2N/MoS2异构结构表现出100%的道化概率和完美的线性IV曲线.
观察到Ca2N诱导了MoS2中的2H到1T的相变.

结论:

拟议的供体-接受体异构结构策略有效地减轻了费米级别的固定和接触障碍.
2N不仅与MoS2形成了优良的欧米接触,而且与其他二维过渡金属二基因化物 (TMDC) 形成了优良的欧米接触.
这项工作为具有显著改进的接触性能的先进二维电子设备铺平了道路.

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