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在CrGeTe₃中纳米图案磁边,用于准1D螺旋电子器件

Avia Noah¹, Yishay Zur¹, Nofar Fridman¹

¹The Racah Institute of Physics, The Hebrew University, Jerusalem 9190401, Israel.

ACS applied nano materials

|May 31, 2023

概括

像CrGeTe3这样的二维范德瓦尔斯磁铁在边缘表现出硬铁磁性. 较窄的样本显示由于边缘接近而增强的磁性,使新的自旋电子设备应用成为可能.

科学领域:

凝聚物质物理学凝聚物质物理学
材料科学材料科学材料科学
纳米技术纳米技术

背景情况:

二维 (2D) 范德瓦尔斯磁铁对于纳米磁性研究和应用至关重要.
铁磁磁体的边缘磁矩通常比内部磁矩弱,这是由于旋转相互作用减少.
之前的研究表明,CrGeTe3 (CGT) 片 <10 nm 呈现硬铁磁性,而较厚的片则仅显示边缘硬铁磁性.

研究的目的:

为了研究CGT中人工边缘的磁性特性.
为了描述CGT片的内部和边缘之间的磁相互作用.
探索用于自旋电子器件的CGT调整局部磁性属性的方法.

主要方法:

在CGT中使用聚焦离子束 (FIB) 蚀刻制造人工边缘.
在CGT中通过蚀刻编写磁纳米线.
通过分析内部和和去极化场进行磁相互作用的表征.
使用束诱导非磁性的CGT区域的模态化.

主要成果:

在CGT中,人工边缘表现出硬铁磁性,类似于切割边缘.
内部的磁性特性 (和和去极化场) 取决于横向样本尺寸.
窄于300nm的CGT样本在边缘之间的内部区域表现出硬铁磁性.
束无形化使得CGT非磁性,允许局部磁性属性调节.

结论:

在狭窄的CGT样本中,边缘的近距离增强了磁交换,诱导了内部的硬铁磁.
FIB蚀刻的人工边缘提供了一种创建磁纳米线和研究边缘内部磁相互作用的方法.
无形化为CGT片中的局部磁性控制提供了一条新的途径,促进了自旋电子设备的集成.

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