充电转旋转换在完全表轴的Ru/Cu混合纳米层中,具有接口控制
Jieyuan Song1,2, Cong He1, Thomas Scheike1
1National Institute for Materials Science (NIMS), Tsukuba 305-0047, Japan.
Nanotechnology
|May 31, 2023
概括
在Ru/Cu异构结构中的接口工程增强了节能自旋电子设备的自旋厅导电性. 混合纳米层提高了电荷转旋转换效率,这对于下一代内存技术至关重要.
科学领域:
- 这就是Spintronics.
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
背景情况:
- 有效的电荷转自旋转转换对于开发低功耗的自旋电子设备至关重要,比如自旋轨道扭矩 (SOT) 磁力制随机访问记忆.
- 材料中增强的自旋霍尔导电性是提高设备性能的一个关键因素.
研究的目的:
- 调查接口工程和纳米层插入对表轴性Ru/Cu异构结构中自旋霍尔导电性的影响.
- 量化评估这些工程结构中的旋转电流生成和旋转厅效率.
主要方法:
- 制造具有Cu/Ru纳米层插入的完全表轴的Ru/Cu异构结构.
- 高分辨率高角度环状暗场扫描传输电子显微镜用于界面分析.
- 测量单向旋转霍尔磁阻和旋转扭矩铁磁共振,以评估旋转霍尔效率 (ξDL).
主要成果:
- 在利的Ru/Cu薄膜中观察到相当大的2.2%的旋转霍尔效率 (ξDL).
- 插入Cu/Ru纳米层提高了自旋霍尔效率至-3.7%.
- 实现了有效的自旋霍尔导电性 (35) × 10^5 ħ2/eΩ−1m−1,相当于金.
结论:
- 使用混合纳米层结构的接口控制显著提高了Ru/Cu系统中的自旋霍尔导电性.
- 这种方法使得使用具有较弱自旋轨道相互作用的高导电性金属可用于自旋电子应用.
- 这些发现为开发稳定,低成本和节能的自旋电子设备铺平了道路.
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