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氧空缺缺陷密度对TiO₂基指数选择器的非线性和短期可塑性的影响

Mun Yin Chee¹, Putu Andhita Dananjaya¹, Gerard Joseph Lim¹

¹School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, 637371, Singapore.

|May 31, 2023

概括

减少Pt/TiO2/Pt选择器中氧气空缺缺陷,提高了它们的非线性和短期可塑性. 较低的缺陷密度对于提高RRAM交叉条数组的性能至关重要.

科学领域:

材料科学材料科学材料科学
固态物理固态物理
设备工程设备工程

背景情况:

电阻随机存储器 (RRAM) 交叉阵列的性能严重依赖于选择器设备的非线性.
优化选择器特性是提高读取边缘和设备可靠性的关键.

研究的目的:

研究氧空缺缺陷密度与Pt/TiO2/Pt指数选择器的非线性之间的关系.
了解喷雾压力如何影响缺陷度和导电机制.
评估缺陷密度对这些选择器的短期可塑性的影响.

主要方法:

在TiO2沉积过程中通过变化的喷雾压力制造Pt/TiO2/Pt选择器.
用于确定设备非线性和导电机制的电气表征 (Schottky与Poole-Frenkel发射对比).
对缺陷密度与喷雾压力和设备性能相关性的分析.

主要成果:

随着氧空缺缺陷密度的降低,选择器非线性度会增加.
喷射压力直接控制氧气空隙度,将导电从Schottky转移到Poole-Frenkel发射.
较低的缺陷密度可以提高Pt/TiO2/Pt选择器的短期可塑性.

结论:

降低氧空缺缺陷密度对于提高Pt/TiO2/Pt指数选择器的非线性至关重要.
控制喷射压力提供了一种调整缺陷度和优化选择器性能的方法.
这些发现对于通过改进的选择器设计来推进RRAM交叉条数组架构至关重要.

关键词:

1S1R 1S1R 是一个这是RRAM,RRAM.基于TiO2的选择器氧气空缺的地方是空缺的.短期的可塑性是短期的可塑性.

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