通过故意的化学兴奋剂来控制拉塞利特Bi2WO6中的孔密度
Makoto Minohara1, Yuka Dobashi1,2, Naoto Kikuchi1
1Research Institute for Advanced Electronics and Photonics, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan.
Inorganic chemistry
|June 1, 2023
概括
研究人员开发了一种新的方法来控制p型氧化物半导体中的孔密度,这种方法是通过对 bismuth tungstate进行注. 这一突破使得使用这些材料设计先进的电子设备成为可能.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 半导体研究 半导体研究
背景情况:
- 基于单双ns2的p型氧化物半导体,如基于Sn2+或Bi3+的复杂氧化物,已通过调节价值带最大来开发.
- 调整化学成分允许带隙修改,但由于化学稳定性差和氧气空隙形成,控制孔密度仍然具有挑战性.
- 无法控制孔密度阻碍了新兴的p型和n型氧化物半导体设备的开发.
研究的目的:
- 通过多晶Bi2WO6的故意化学兴奋剂来报告孔密度的控制.
- 为了研究兴奋剂度对Bi2WO6中孔密度的影响.
- 为开发实用的p型氧化物半导体提供见解.
主要方法:
- 计算方法用于预测氧化物半导体特性.
- 多晶体Bi2WO6与Nb和Ta等元素进行化学合.
- 在高温下对化Bi2WO6的孔密度的分析.
主要成果:
- 多晶体Nb-或Ta-doped Bi2WO6中的孔在很大程度上被颗粒边界所困住.
- 在Bi2WO6中的高温孔密度随着兴奋剂度的增加而单调地增加.
- 在p型氧化物半导体中证明了对孔密度的故意控制.
结论:
- 蓄意的化学兴奋剂提供了一条可行的途径来控制Bi2WO6中的孔密度.
- 了解粒度边界效应对于优化p型氧化物半导体至关重要.
- 这项研究为实际的p型氧化物半导体应用铺平了道路.
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