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一般空间限制再结晶方法用于快速制备厚度可控制和均的有机半导体单晶

Shougang Sun¹, Jiannan Qi¹, Shuguang Wang¹

¹Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, 300072, Tianjin, China.

Small (Weinheim an der Bergstrasse, Germany)

|June 2, 2023

概括

一种新的空间限制再结晶 (SCR) 方法快速生长具有可控制厚度的均有机半导体单晶 (OSSC). 这一突破使各种有机半导体的高性能有机场效应晶体管 (OFET) 成为可能.

科学领域:

材料科学材料科学材料科学
有机电子有机电子
晶体学晶体学是指结晶学.

背景情况:

有机半导体单晶 (OSSC) 对于理解有机半导体 (OSC) 特性和开发高性能有机场效应晶体管 (OFET) 至关重要.
现有的方法缺乏通用性,以便在各种OSC中快速准备可控制厚度和统一的OSSC.

研究的目的:

开发一种通用,快速的方法来种植可控制厚度和统一的OSSC.
使用新方法研究生长参数对OSSC形成的影响.

主要方法:

空间限制再结晶 (SCR):对OSC多晶薄膜施加纵向压力,以控制谷物生长并诱导再结晶.
全面调查生长参数:分析生长时间,温度和纵向压力对OSSC厚度和均性的影响.

主要成果:

通过SCR方法,可以快速 (在第二个时间表上) 增长可控制厚度和均的OSSC.
已证明适用于各种OSC,包括小分子 (可溶和不可溶) 和聚合物.
实现了高质量的晶体阵列生长,并制造出具有高流动性 (4.1 ± 0.4 cm2 V−1 s−1) 和出色的均性的DNTT单晶OFET.

结论:

与现有技术相比,SCR方法在增长速度,通用性,厚度控制和统一性方面提供了更好的性能.
这种方法对制造先进的有机电子和光电子设备具有重大前景.

关键词:

有机半导体有机半导体有机晶体管有机晶体管再结晶化,重新结晶化单晶是一种单晶体.空间限制的局限性

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