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Updated: Jul 28, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

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垂直范德瓦尔斯异质连接二极管包括2D半导体在3Dβ-Ga2O3上

Chloe Leblanc1, Dinusha Herath Mudiyanselage2, Seunguk Song1

  • 1Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA. dmj@seas.upenn.edu.

Nanoscale
|June 2, 2023
PubMed
概括

研究人员通过调整基板方向,二维材料和接触器来优化氧化物 (Ga2O3) 垂直二极管. 最好的设备实现了电力电子的创纪录的整形比率和高开源电流密度.

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