相关实验视频

Updated: Jul 28, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

9.7K

超灵敏的电压控制的基于 skyrmion 的自旋二极管.

Davi R Rodrigues1, Riccardo Tomasello1, Giulio Siracusano2

  • 1Department of Electrical and Information Engineering, Politecnico of Bari, I-70125 Bari, Italy.

Nanotechnology
|June 2, 2023
PubMed
概括

我们开发了一个被动的spintronic二极管,使用 skyrmions 进行高度敏感的微波检测. 这种新的设计显著优于传统的二极管,为先进的电子产品提供节能和可扩展的解决方案.

关键词:
二极管二极管是如何使用的斯基尔米昂斯斯基尔米昂斯旋转电子技术 (spintronics) 是一个

更多相关视频

Experimental Methods for Trapping Ions Using Microfabricated Surface Ion Traps11:45

Experimental Methods for Trapping Ions Using Microfabricated Surface Ion Traps

Published on: August 17, 2017

14.5K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K

相关概念视频

Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
406
Diode: Reverse bias01:14

Diode: Reverse bias

A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
839
Diode: Forward bias01:20

Diode: Forward bias

In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
1.1K
The Ideal Diode01:15

The Ideal Diode

A diode is a semiconductor device that allows current to flow in one direction only, making it a crucial component in electronic circuits for controlling the direction of current flow. An ideal diode is a simplified version of a real diode used to understand how diodes work in circuits. It possesses two terminals: the positive anode and the cathode, which is negative. When a positive voltage is applied to the anode relative to the cathode, the diode is in a forward-biased state, allowing...
934
Zener Diodes01:16

Zener Diodes

Zener diodes are specialized semiconductor devices designed to operate in the reverse breakdown region, where they allow current to flow into the cathode, making it positive relative to the anode. This reverse operation distinguishes Zener diodes from conventional diodes and enables their use in various applications, most notably as voltage regulators. One of the defining characteristics of Zener diodes is their nearly vertical I-V (current-voltage) characteristic curve above a certain...
476
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
520