高容量MoS的设计
Yanli Zhou1, Qiming Li1, Qi Han1
1School of Environment and Material Engineering, Yantai University, Yantai, 264005, China.
Small (Weinheim an der Bergstrasse, Germany)
|June 2, 2023
概括
层次的硫化铜@添加碳@二硫化物 (Cu2 S@NC@MoS3) 异构结构提供优越的储存. 这些材料具有高容量,优异的速率能力和长周期寿命,适用于先进的储能应用.
科学领域:
- 材料科学 材料科学 材料科学
- 电化学 电化学 电化学
- 纳米技术 纳米技术
背景情况:
- 开发高性能电极材料对于先进的离子电池至关重要.
- 现有的材料往往由于周期稳定性差和导电性低而受到损害.
- 层次纳米结构为克服这些局限性提供了潜在的解决方案.
研究的目的:
- 为增强离子储存构建新的等级Cu2 S@NC@MoS3异构结构.
- 为了研究Cu2 S,N-doped碳和MoS3组件的协同效应.
- 阐明电化学性能和储存机制.
主要方法:
- 通过多步骤的装饰过程合成层次的Cu2 S@NC@MoS3异构结构.
- 电化学表征包括循环电压测量,静电电荷放电和速率能力测试.
- 对反应机制,动力学和理论计算的分析.
主要成果:
- Cu2 S@NC@MoS3异构结构在200个循环中以0.5 A g-1的速度显示出545 mAh g-1的高充电能力.
- 观察到出色的速率能力,424 mAh g-1 保持在 15 A g-1.
- 实现了超长的循环寿命,在2000个循环后在3 A g-1下显示491 mAh g-1,电压歇斯底里最小.
- 一个用Na3 V2 (PO4) 3 @rGO阴极组装的完整细胞表现出了显著的电化学特性.
结论:
- 层次化的Cu2 S@NC@MoS3异构结构为高性能离子存储提供了一个有前途的平台.
- 三元组件的协同效应和独特的纳米结构有助于优越的电化学性能.
- 这些发现凸显了这种异构结构在下一代储能设备中的潜力.
更多相关视频
08:50Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
9.3K
06:53Author Spotlight: Magnetometric Characterization of Intermediates in the Solid-State Electrochemistry of Redox-Active Metal-Organic Frameworks
Published on: June 9, 2023
2.0K
相关概念视频
MOS Capacitor
863
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
863
MOSFET: Enhancement Mode
401
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
401
MOSFET: Depletion Mode
412
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
412
Characteristics of MOSFET
431
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
431
MOSFET
520
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
In an n-MOSFET, the structure includes n-type source and drain...
520
MOSFET Amplifiers
188
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
188
