在SnSe薄膜中进行自我限制的固体测量.
Jonathan R Chin1, Marshall B Frye1, Derrick Shao-Heng Liu2
1The School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA. lauren.garten@mse.gatech.edu.
Nanoscale
|June 5, 2023
概括
自限性固体测量可以使大规模的锡化 (SnSe) 薄膜生长. 这种方法控制了锡与的比率,这对于2D材料设备应用至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- 将二维材料缩放到单层的极限,可以解锁独特的功能.
- 在具有强的范德瓦尔斯键的锡化物 (SnSe) 等分层材料中实现静态测量控制是具有挑战性的.
- 垂直增长和保持精确的静态度是2D材料制造中的关键障碍.
研究的目的:
- 通过分子光束表达氧化 (epitaxy) 来研究SnSe薄膜生长中的自限固体测量机制.
- 了解Sn:Se流量比如何影响SnSe相位稳定和结晶学方向.
- 确定用于设备应用的SnSe层侧面尺度增强的方法.
主要方法:
- 分子束表 (MBE) 用于SnSe薄膜沉积.
- ReaxFF分子动力学 (MD) 模拟以建模集群演变和石化学.
- 拉曼光谱分析膜生长过程中的相变.
- 传输电子显微镜 (TEM) 检查薄膜的微观结构和结晶学方向.
主要成果:
- 在 SnSe 的 Pnma 阶段在 Sn:Se 流量比率的广泛范围 (1:1 到 1:5) 中得到稳定.
- 观察到自限性固体测量,过多的形成集群,对SnSe固体测量影响最小.
- 超过0.25 Å s-1的增长率导致了SnSe2的形成,扰乱了SnSe的晶体方向.
- 优化条件,避免SnSe2,增加了SnSe层的横向尺度.
结论:
- 自限性固体测量是控制SnSe薄膜生长的可行策略.
- 了解和控制二次相形成 (SnSe2) 对大规模的SnSe层生长至关重要.
- 这种方法为制造用于先进电子和光电子设备的大型横向尺度SnSe提供了有前途的途径.
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