MnBiBiMn-Bi

Xi Wu1,2, Chao Ruan1, Peizhe Tang3,4

  • 1Shenzhen Geim Graphene Center and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, People's Republic of China.

Nano letters
|June 5, 2023
PubMed
概括

抗铁磁拓绝缘体MnBi2Te4表现出像MnBi和BiMn这样的缺陷,阻碍了大间隙表面状态. 通过回火完全消除缺陷是很困难的,影响拓性质.