相关实验视频

Updated: Jul 27, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

在异形形LaNiO中可控制的电阻切换行为

Yong Zhang¹, Shunhua Gao¹, Guiming Cao²

¹School of Microelectronics, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China.

|June 6, 2023

概括

矿氧化物记忆器中的氧气空缺显著影响电阻切换行为. 控制它们在LaNiO3/Nb:SrTiO3设备中的分布可以提高非易失性内存应用的性能和稳定性.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
设备物理设备物理

背景情况:

矿氧化物记忆器对非易失性记忆有希望.
氧气空缺是施托基屏障调节和记忆效应的关键.
设备的可变性阻碍了当前memristors的稳定性和可重现性.

研究的目的:

为了研究氧空位形状对LaNiO3 (LNO) /Nb:SrTiO3 (NSTO) 设备中电阻切换 (RS) 现象的影响.
阐明观察到的RS行为背后的物理机制.
为改善memristor性能和稳定性提供见解.

主要方法:

制造表轴性LNO/NSTO异构结构.
氧空位度和分布的系统变化.
分析电阻切换行为的电气表征.
对传导机制的分析.

主要成果:

在LNO膜中的氧空位迁移对于记忆行为至关重要.
在LNO薄膜中增加的氧气空隙提高了电阻开/关比 (HRS和LRS).
导电机制从热电离子发射转向道辅助的热电离子发射,随着氧气空缺的增加.
在LNO/NSTO接口上优化氧气空缺可以实现陷辅助道,提高设备性能.

结论:

这项研究清楚地将氧空位配置文件与LNO/NSTO记忆器中的多种RS行为联系起来.
氧气空位工程提供了一种可行的策略,以提高基于Schottky结的memristors的性能和稳定性.
了解这些关系为未来的设备设计提供了物理洞察力.

关键词:

在LaNiO3氧化物电极.斯科特基十字路口的交叉点双极电阻开关双极电阻开关氧气空缺职位的个人资料空间电荷有限的导电.

更多相关视频

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing

Published on: June 9, 2023

Writing and Low-Temperature Characterization of Oxide Nanostructures

Writing and Low-Temperature Characterization of Oxide Nanostructures

Published on: July 18, 2014

相关概念视频

Biasing of P-N Junction

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

Biasing of FET

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...

Characteristics of MOSFET

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

MOSFET

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...