在平面门的石墨烯晶体管与二硫化被动化层,经过表轴生长
Po-Cheng Tsai1, Chun-Wei Huang2, Shoou-Jinn Chang2,3
1Research Center for Applied Sciences, Academia Sinica, 128 Academia Road, Section 2, Nankang, Taipei, 11529, Taiwan.
Scientific reports
|June 6, 2023
概括
二硫化物 (MoS2) 在新型晶体管中被动化石墨烯通道,减少歇斯底里. 直接接触可以提高设备的性能,增加导电性和场效应移动性.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术 纳米技术
背景情况:
- 石墨烯具有出色的电子性能,但可能会受到环境不稳定的影响.
- 二硫化物 (MoS2) 是一种2D材料,具有作为保护层的潜力.
- 异构结构为先进的电子设备提供协同作用的特性.
研究的目的:
- 调查MoS2在基于石墨烯的晶体管中作为被动化层的使用.
- 为了制造和描述使用MoS2/石墨烯异构结构的内平面门晶体管.
- 评估MoS2被动化对设备性能和稳定性的影响.
主要方法:
- 制造具有MoS2/石墨烯异构结构的内平面门晶体管.
- 带有和没有MoS2被动化的设备的电气特性.
- 设备性能指标的比较,包括歇斯底里,接触电阻,排水电流和场效应移动性.
主要成果:
- 该MoS2层有效地使石墨烯通道被动,从而导致弱装置歇斯底里.
- 具有直接电极/石墨烯接触的设备的接触电阻降低,排水电流增加.
- 观察到增强的场效应移动性,超过霍尔测量值,表明载体度更高.
结论:
- MoS2 作为晶体管中石墨烯通道的有效被动化层.
- 直接接触电极显著提高了MoS2/石墨烯晶体管的性能.
- 增强的移动性表明,被动化石墨烯通道中的载体运输和导电性得到了改善.
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