基于CuI/a-ZTO异质连接的自动供电的柔性紫外线光探测器,在室温下处理
Yunze Liu1, Tao Zhang1, Leyun Shen1
1State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310058, P. R. China.
ACS applied materials & interfaces
|June 7, 2023
概括
研究人员开发了一种新的室温沉积柔性紫外线光探测器,使用无形氧化 (a-ZTO) 和酸铜 (CuI). 这种自动供电的设备提供了高性能和稳定性,为先进的光电子铺平了道路.
科学领域:
- 材料科学 材料科学 材料科学
- 光电学是指光电子产品.
- 半导体物理 半导体物理
背景情况:
- 传统的宽带半导体需要高温加工,限制了基材选择.
- 无形氧化物半导体为低温制造和灵活性提供了潜力.
研究的目的:
- 开发一种高性能,自动供电的紫外线光探测器,使用室温沉积材料.
- 研究基于无形氧化 (a-ZTO) 和铜 (CuI) 的异质连接在光电子应用中的潜力.
- 为了证明灵活和透明的光电探测器的可行性.
主要方法:
- 脉冲激光沉积 (PLD) 用于在室温下制造n型无形氧化 (a-ZTO) 层.
- 用于培养p型铜化物 (CuI) 层的热蒸发.
- 一个垂直结构的CuI/ZTO异质连接紫外线光探测器的制造.
- 设备性能的表征,包括开关比,响应时间,稳定性和频率依赖性.
- 在聚乙烯二甲 (PET) 基板上建造和测试柔性光电探测器.
主要成果:
- CuI/ZTO异质连接光探测器表现出自动供电的运行,开关比超过104.4.
- 实现的快速响应时间:2.36 ms (上升) 和1.49 ms (下降).
- 证明了长期稳定性 (在5000秒后保持92%),以及可重现的频率响应.
- 在PET基板上成功制造出灵活的光电探测器,在曲条件下保持性能.
- 这标志着基于CuI的异构结构在柔性光探测器中的首次应用.
结论:
- 无形-锡氧化物和酸铜的组合是开发高性能紫外线光探测器的一个有前途的方法.
- 室温沉积使灵活透明基板的使用成为可能,扩大了设备的应用.
- 开发的光电探测器技术为未来的灵活/透明光电子设备提供了潜力.
相关概念视频
UV–Vis Spectrometers
1.4K
The absorbance of UV and visible (UV–visible) radiations is measured using a UV–visible spectrophotometer. Deuterium lamps, which emit UV radiation, and tungsten lamps, which produce radiation in the visible region, are used as light sources in UV–visible spectrophotometers. A monochromator or prism is used for diffraction grating, i.e., to split the incoming radiation into different wavelengths. A system of slits is used to focus the desired wavelength on the sample cell.
1.4K
Ultraviolet and Visible (UV–Vis) Spectroscopy: Overview
2.8K
Ultraviolet–visible (UV–visible or UV–Vis) spectroscopy is an analytical technique that investigates the interaction between matter and UV–Vis light within the electromagnetic spectrum. This method is widely used for its versatility, simplicity, and relatively quick data acquisition, making it valuable for both qualitative and quantitative analysis. When UV–Vis radiation passes through a material, molecules absorb light depending on the energy required for...
2.8K
P-N junction
590
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
590
Photoluminescence: Applications
441
Photoluminescence offers a wide range of applications due to its inherent sensitivity and selectivity. This technique allows for both direct and indirect analyses of the analyte. Direct quantitative analysis is possible when the analyte exhibits a favorable quantum yield for fluorescence or phosphorescence. However, an indirect analysis may be feasible if the analyte is not fluorescent or phosphorescent, or if the quantum yield is unfavorable. Indirect methods include reacting the analyte with...
441


