相关实验视频

Updated: Jul 27, 2025

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

Published on: February 27, 2017

全矿双联太阳能电池与3D/3D双层矿异质连接

Renxing Lin¹, Yurui Wang¹, Qianwen Lu¹

¹National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Frontiers Science Center for Critical Earth Material Cycling, Nanjing University, Nanjing, China.

|June 8, 2023

概括

研究人员开发了一种全矿双层太阳能电池的新型3D/3D矿异质连接. 这项创新通过减少窄带间隔矿子电池的重组损失来提高功率转换效率 (PCE).

科学领域:

材料科学
可再生能源
太阳能发电

背景情况:

所有矿合太阳能电池的功率转换效率 (PCE) 比单节电池更高,成本更低.
由于陷密度高,混合-锡 (Pb-Sn) 狭带间隙 (NBG) 矿子电池的效率较低.
现有的2D/3D矿异质连接减少了重组,但导致输送损失,限制了填充因子 (FF).

研究的目的:

开发一个改进的矿异质连接,用于全矿双联太阳能电池.
抑制表面非辐射重组并增强Pb-Sn NBG矿子细胞中的电荷提取.
为了实现更高的PCE和运行稳定性,

主要方法:

具有II型带结构的不混合的3D/3D双层矿异质连接 (PHJ) 的制造.
在Pb-Sn NBG矿与电子输送层 (ETL) 之间的接口工程.
混合蒸发溶液处理以在NBG矿上沉积宽带间隙 (WBG) 矿层.

主要成果:

采用1.2μm吸收器实现了Pb-SnPSC的23.8%,具有0.873V的高开路电压 (Voc) 和82.6%的FF.
在全矿合太阳能电池中,PCE达到创纪录的28.5% (经过认证的28.0%).
在600小时的持续模拟单太阳照明后,封装的合器件的性能保持在90%以上.

结论:

开发的3D/3D双层PHJ有效地抑制了界面重组,并改善了电荷提取.
这种异质连接策略显著提高了NBG矿子电池和整体合装置的性能.
这种增强的稳定性和效率凸显了新一代太阳能电池的潜力.

更多相关视频

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on: September 8, 2017

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

Published on: March 19, 2017

相关概念视频

P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...