电导率,西贝克系数和p型膜的晶体生长通过温度依赖的射频喷射
Minseok Kim1, Hye-Mi Kim1, Hiroshi Yanagi2
1Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea.
Nanotechnology
|June 9, 2023
概括
在无线电频率喷射过程中增加基质温度会增强 (Te) 薄膜结晶性和电特性. 更高的沉积温度导致了更大的晶体尺寸,显著改善了霍尔运动性和热电应用的Seebeck系数.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- (Te) 薄膜以其优良的电气和热电特性而闻名.
- 沉积过程中的基质温度是影响薄膜结晶性和性能的关键因素.
- 优化沉积参数是提高薄膜功能的关键.
研究的目的:
- 为了研究沉积温度,晶体大小和薄膜的电性能之间的关系.
- 探索带有温度控制的射频喷雾的潜力,用于制造增强的薄膜.
- 了解Te晶体结构对其电气和热电特性的影响.
主要方法:
- 无线电频率喷雾用于 (Te) 薄膜沉积.
- 沉积温度从室温变化到100°C.
- 使用X射线衍射 (XRD) 和全宽半最大 (FWHM) 计算来分析晶体大小.
- 为了评估电气性能,进行了霍尔移动性和西贝克系数测量.
主要成果:
- 从室温增加到100°C的沉积温度导致晶体大小显著增加.
- 随着晶体大小的增加,大厅的移动性从16到33cm2V-1s-1得到改善.
- 随着沉积温度的增加,Seebeck系数显示出显著的增强,从50升至138μVK-1 .
结论:
- 在无线电频率喷雾过程中轻松控制温度是增强薄膜特性的一种有效方法.
- 薄膜的晶体结构在确定它们的电和热电性能方面起着至关重要的作用.
- 这些发现支持用于热电设备,CMOS,FET和太阳能电池的先进半导体材料的开发.
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