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无电场旋转轨道扭矩驱动的切换垂直磁道交叉点通过曲电流
Vaishnavi Kateel1,2, Viola Krizakova3, Siddharth Rao1
1IMEC Kapeldreef 75, B-3001 Leuven, Belgium.
Nano letters
|June 9, 2023
概括
本研究介绍了通过塑造电流路径,为旋转轨道扭矩磁道结 (SOT-MTJs) 引入无场切换方法. 这项创新使得在没有外部磁场的情况下实现了确定性磁切换,为先进的内存和计算铺平了道路.
科学领域:
- 这就是Spintronics.
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
背景情况:
- 电流诱导的旋转轨道扭矩 (SOT) 在磁道连接处 (MTJs) 提供高效的磁性操纵.
- 现有的SOT-MTJ技术需要外部磁场来进行确定性切换,这阻碍了实际应用.
- 可扩展和高效的磁开关对于下一代内存和计算至关重要.
研究的目的:
- 为SOT-MTJ设备开发一个无现场开关 (FFS) 解决方案.
- 为了实现仅使用电流的确定性磁切换.
- 推进SOT-MTJ在实际电子设备中的整合.
主要方法:
- 塑造旋转轨道扭矩通道,在电荷电流路径中创建局部曲线.
- 通过电流塑造产生空间不均的旋转电流.
- 将不均的旋转轨道扭矩应用于相邻的磁性自由层进行切换.
主要成果:
- 在缩放的SOT-MTJ中实验性演示无现场切换.
- 在纳米秒时间尺度上实现了确定性磁切换.
- 验证了SOT-MTJ操纵电流塑造技术的有效性.
结论:
- 拟议的电流成型方法为SOT-MTJs提供了一个可行的无现场切换解决方案.
- 这种方法是可扩展的,无关材料的,并且与晶圆规模制造兼容.
- 允许开发纯电流驱动的回旋电子系统用于内存和计算.
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