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堆叠的SiGe纳米片p-FET用于3nm以下的逻辑应用

Chun-Lin Chu1, Shu-Han Hsu2,3, Wei-Yuan Chang1

  • 1Taiwan Semiconductor Research Institute, NARL, Hsinchu, Taiwan.

Scientific reports
|June 9, 2023
PubMed
概括

垂直堆叠的- (SiGe) 纳米板场效应晶体管 (FET) 已成功制造. 这些先进的晶体管表现出色的性能,包括高开/关比和改进的门控制.

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
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