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Updated: Jul 27, 2025

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
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原子层沉积HfO的原子层沉积

Sylwia Gieraltowska1, Lukasz Wachnicki1, Piotr Dluzewski1

  • 1Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, 02-668 Warsaw, Poland.

Materials (Basel, Switzerland)
|June 10, 2023
PubMed
概括

研究了二氧化 (HfO2) 薄膜的原子层沉积 (ALD). 较高的温度提高了薄膜的结晶性和介电性质,氨水增强了介电常数.

关键词:
这就是ALD.在HfO2中,二氧化碳是最重要的.高k介电介电的电压电阻.

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