通过调节聚合物介电器来增强道OFET的稳定性
Po-Hsiang Fang1, Peng-Lin Kuo1, Yu-Wu Wang2
1Department of Photonics, National Cheng Kung University, Tainan 70101, Taiwan.
Polymers
|June 10, 2023
概括
研究人员使用聚胺 (PI) 介电层改进了有机场效应晶体管 (OFET) 和内存设备. 这种修改提高了电稳定性,并降低了工作电压,以提高设备的性能和耐用性.
科学领域:
- 有机电子学有机电子学
- 材料科学是一种材料科学.
- 半导体器件是指半导体器件.
背景情况:
- 像氧化 (AlO) 这样的高K介电材料用于有机场效应晶体管 (OFET) 中,以降低工作电压.
- 在基于OFET的内存设备中实现高电稳定性和可靠的保留仍然是一个挑战.
研究的目的:
- 提高有机场效应晶体管 (OFET) 和基于OFET的内存设备的性能和稳定性.
- 为了研究聚胺 (PI) 以不同的固体含量作为门介电修饰剂的影响.
主要方法:
- 有机场效应晶体管 (OFET) 使用N,N'-二二烯-3,4,9,10-四碳二胺 (PTCDI-C13) 作为活性层进行制造.
- 门介电器使用不同固体含量的聚胺 (PI) 进行了修改,以调整其性能并降低陷状态密度.
- 评估了在门偏差压力下设备的性能和稳定性.
主要成果:
- 用PI层进行修改,通过PI双极场的累积载体来补偿门场引起的应力,从而提高OFET的性能和稳定性.
- 与只有AlO介电层的OFET相比,具有PI介电层的OFET在固定门偏差应力下表现出更好的稳定性.
- 结合PI膜的基于OFET的内存设备表现出良好的记忆保留和耐用性.
结论:
- 一个低压运行和稳定的有机场效应晶体管 (OFET) 成功制造.
- 为工业应用开发了一种有机内存设备,具有有前途的内存窗口.
- 门介电物的聚胺 (PI) 改造为提高有机电子设备稳定性和性能提供了一个可行的策略.
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