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Updated: Jul 26, 2025

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
11:10

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

Published on: May 23, 2018

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单晶V2O3的金属绝缘体过渡通过范德瓦尔斯接口工程

Jie Jiang1, Lifu Zhang1, Yang Hu1

  • 1Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States.

ACS nano
|June 12, 2023
PubMed
概括

这项研究揭示了氧化 (V2O3) 单晶片中独特的金属绝缘体过渡模式,与表轴膜不同. 量身定制板-基板相互作用为Mott设备应用提供了对相位过渡的控制.

关键词:
2D/3D混合结构的混合结构.域格局 域格局 域格局 域格局金属绝缘体过渡 过渡应变效应是一种应变效应.范德瓦尔斯接口的接口瓦纳二氧化二氧化.

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