在平面金属半导体接口上优化热电子采集,使用氧化化薄膜
Brock Doiron1, Yi Li1,2, Ryan Bower3
1Department of Physics, Imperial College London, London SW7 2BW, U.K.
ACS applied materials & interfaces
|June 12, 2023
概括
氧化 (TiON) 接口通过在电子放松中创建瓶来增强用于太阳能收集的电子提取. 优化TiON中的氧含量可以改善载体提取,并延长金属半导体界面的电子寿命.
科学领域:
- 材料科学 材料科学 材料科学
- 光催化作用的光催化
- 太阳能能源转换的转换
背景情况:
- 金属半导体接口对于光催化和亚频段间隙太阳能收集至关重要.
- 从金属到半导体的高效电子提取是这些应用的关键.
研究的目的:
- 为了比较Au/TiO2和TiON/TiO2接口的电子提取效率.
- 研究TiON中的氧含量对电子放松动态和提取效率的作用.
主要方法:
- 时间分辨率的探针光谱学用于研究电子重组率.
- 使用陷介导重组模型进行分析.
- 氧含量在氧化膜中的系统变化.
主要成果:
- TiON/TiO2接口在电子放松方面存在瓶,与具有纳秒重组寿命的Au/TiO2接口不同.
- 一个陷介导的重组模型解释了观察到的电子放松动态.
- 优化的TiO0.5N0.5薄膜显示出最高的载体提取效率 (2.8 × 10^19 m^-3) 和最慢的捕获.
- 一个相当大的热电子群体 (1.6 × 10^18 m^-3) 到达了氧化物表面.
结论:
- 氧气在增强电子收获和延长金属半导体接口上的电子寿命方面发挥着生产作用.
- 通过使用原生氧化氧化的氧化物,可以实现优化的金属半导体接口.
- TiON为先进的光催化和太阳能应用提供了一个有前途的材料.
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