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Updated: Jul 26, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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Published on: November 28, 2017

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通过零价值的过渡金属间隔,对MoS2进行脱皮

Duanduan Zhao1, Song Xu1, Hengan Wang2

  • 1College of Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou 450052, P. R. China. song24xu11@zzu.edu.cn.

Chemical communications (Cambridge, England)
|June 13, 2023
PubMed
概括

零价值的过渡金属有助于将二硫化 (MoS2) 剥落成少数层的纳米薄膜. 这些纳米片表现出增强的电催化演化反应 (HER) 活性,提供了一种新的,温和的制备策略.

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Properties of Transition Metals02:58

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Transition metals are defined as those elements that have partially filled d orbitals. As shown in Figure 1, the d-block elements in groups 3–12 are transition elements. The f-block elements, also called inner transition metals (the lanthanides and actinides), also meet this criterion because the d orbital is partially occupied before the f orbitals.
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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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