相关实验视频

Updated: Jul 26, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K

在添加的WS2 /Bi2 O2 Se异构结构中的电荷转移调制

Basant Chitara1, Edgar Dimitrov2, Mingzu Liu2

  • 1Department of Chemistry and Biochemistry, North Carolina Central University, Durham, NC, 27707, USA.

Small (Weinheim an der Bergstrasse, Germany)
|June 13, 2023
PubMed
概括

添加的二硫化 (V-WS2) 与 bismuth oxychalcogenide (Bi2O2Se) 结合,增强了下一代太阳能电池的电荷转移. 这种新的二维 (2D) 异构结构提高了光伏设备的光采集效率.

关键词:
两维材料是二维材料.转移费用 转移费用 转移费用 转移费用光发光 (PL) 灭灭第二类异构结构是II类异构结构.添加剂WS2的瓦纳添加剂WS2.

更多相关视频

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.2K
Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model11:10

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

Published on: May 23, 2018

12.0K

相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
288
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
395