通过控制氧化物/亚氧化物HfOx双层记忆装置中的光纤几何学来更新线性和对称的突触重量特性,用于神经形态计算
Dwipak Prasad Sahu1, Kitae Park2, Peter Hayoung Chung2
1Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Republic of Korea.
Scientific reports
|June 13, 2023
概括
这项研究介绍了一种用于神经形态计算的新型氧化双层记忆装置. 该设备展示了模拟切换行为,可以精确控制突触权重,以改善学习和模式识别.
科学领域:
- 材料科学 材料科学 材料科学
- 神经科学是一个神经科学.
- 计算机工程 计算机工程
背景情况:
- 记忆器件对于基于硬件的神经形态计算至关重要,模仿生物突触.
- 现有的氧化物记忆器件在突然切换方面扎,限制了模拟突触功能.
研究的目的:
- 开发一种具有模拟切换行为的氧化物/亚氧化物 hafnium氧化物双层记忆装置.
- 为了提高神经形态应用的memristive设备的性能.
主要方法:
- 一个Ti/HfO2/HfO2-x/Pt双层记忆装置的制造.
- 模拟导电状态和切换行为的表征.
- 使用X射线光电子谱学分析氧空位度.
- 使用已开发的记忆性突触模拟一个双层感知神经网络.
主要成果:
- 双层装置显示了可控制的导电状态的模拟光纤切换.
- 由于强大的丝形成,可以实现优越的保留和耐久性.
- 增量步骤脉冲编程 (ISPP) 实现了线性和对称的重量更新.
- 在神经网络模拟中,手写数字的识别精度达到了80%.
结论:
- 拟议的二氧化二层记忆装置提供了模拟切换,以实现高效的神经形态计算.
- 精确控制灯丝几何学导致高分辨率,线性和对称的重量更新.
- 这项技术的进步将加速下一代神经形态系统的发展.
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