在超导电路中通过沉浸式冷却来抑制量子浴
M Lucas1, A V Danilov2, L V Levitin1
1Physics Department, Royal Holloway University of London, Egham, UK.
Nature communications
|June 14, 2023
概括
在液态-3 (3He) 中运行量子电路超越了环境温度限制. 这种方法冷却脱凝环境,使超导装置的连续性质变化能够降低到米基尔温以下的温度.
科学领域:
- 量子计算是一种量子计算.
- 超导电路中的超导电路
- 低温物理 低温物理
背景情况:
- 超导装置表现出温度依赖的环境相互作用.
- 由于热约束,像量子比特连贯性高原这样的属性在50mK左右.
- 这些因素包括热量子比特数量,准粒子和表面旋转极化.
研究的目的:
- 为了克服超导量子电路中的热限制.
- 为了证明脱凝环境的高效冷却低于50mK.
- 探索亚毫克尔文操作对量子电路特性的影响.
主要方法:
- 操作一个沉浸在液态-3 (3He) 中的超导电路.
- 使用3He作为散热器来抑制量子浴.
- 在亚毫克尔文温度下测量电路的物理量.
主要成果:
- 在物理量中实现了连续的变化,直到低于mK的温度.
- 证明量子浴的能量放松率增加了一千倍.
- 没有观察到额外的电路损失或来自压抑浴的噪音.
结论:
- 液体3He浸泡有效地消除了超导电路中的热约束.
- 通过3He进行量子浴抑制,增强了连贯性和热管理.
- 这种技术为提高量子处理器性能开辟了新的途径.
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