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氧化物纳米丝带用于潜在的共振道二极管应用

M Sankush Krishna¹, Sangeeta Singh¹, Brajesh Kumar Kaushik²

¹Microelectronics & VLSI lab, National Institute of Technology, Patna-800005, India. maheshunik.pg18.ec@nitp.ac.in.

Physical chemistry chemical physics : PCCP

|June 15, 2023

概括

氧化物纳米丝带具有负差电阻 (NDR),显示出电子设备的潜力. DFT计算证实了它们的金属性质和适用于交换机和内存等NDR应用的适用性.

科学领域:

凝聚物质物理学凝聚物质物理学
材料科学材料科学材料科学
纳米技术纳米技术

背景情况:

氧化纳米带 (ZnONRs) 是一个有前途的纳米材料.
负差电阻 (NDR) 对先进的电子设备至关重要.
兴奋剂是调整材料特性的一个关键策略.

研究的目的:

调查用于NDR应用的化化椅子ZnONRs.
探索原始和N-doped ZnONRs的电子和运输特性.
确定使用这些材料在电子开关,整流器和内存设备中的可行性.

主要方法:

使用密度函数理论 (DFT) 的第一原则计算.
非平衡格林函数 (NEGF) 运输属性的形式主义.
状态部分密度 (PDOS) 的分析,以了解电子结构.

主要成果:

纯正的 ZnONR 是半导体,带隙为 2.53 eV.
由于兴奋剂的使用,N-兴奋的ZnONRs (S_N-ZnO和D_N-ZnO) 表现出金属的行为.
在N-doped ZnONRs中观察到NDR特征.
对于S_N-ZnO (4.58 × 10^21) 和D_N-ZnO (1.83 × 10^22) 计算了高峰到谷电流比率 (PVCR).

结论:

兴奋剂将ZnONR从半导体转化为金属.
在N-doped ZnONR中观察到的NDR归因于原子.
用杂的椅子ZnONR显示出基于NDR的电子应用的巨大潜力.

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