在GaAs上的变态抛物线等级的InGaAs缓冲器中的脱位和应变映射
Nicholas Stephen1, Praveen Kumar1,2, Agnieszka Gocalinska3
1School of Mathematics and Physics, Queen's University Belfast, University Road, Belfast, UK.
概括
我们在GaAs上研究了InGaAs的变态缓冲器,发现AlInGaAs/InGaP超级晶圆比InGaP薄膜具有更高的脱位密度. 这项研究为变形激光器的应力松提供了洞察力.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 光电学是指光电子产品.
背景情况:
- 变态缓冲器对于格子不匹配的异构结构至关重要.
- 在变态缓冲器中调整应变是激光等高性能设备的关键.
研究的目的:
- 为了研究InGaAs在GaAs上生长的变态缓冲器的不同架构.
- 为了将缓冲架构与位移特性和应变分布相关联.
- 为变形激光应用提供关于应变放松的见解.
主要方法:
- 传输电子显微镜 (TEM) 用于分析缓冲架构.
- 研究的InGaP和AlInGaAs/InGaP超级网格具有不同的基质误导和应变平衡层.
- 与缓冲设计相关的脱位密度,分布和局部应变.
主要成果:
- 脱位密度在10^8到10^10cm^-2.2之间.
- 在AlInGaAs/InGaP超级中,异位密度高于InGaP薄膜.
- 确定了两个失位波,线程失位位于比不合适的失位更深 (200-300 nm).
结论:
- 不同的缓冲架构显著影响脱位行为和应变放松.
- AlInGaAs/InGaP超级网格提供了一条通往更高位移密度的途径.
- 这些发现为在变态激光活性区域中调整菌株提供了系统的理解.
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