协同电子和缺陷补偿最大限度地减少了无矿太阳能电池中的电压损失
Gengling Liu1, Xianyuan Jiang2, Wenhuai Feng1
1Key Laboratory of Bioinorganic and Synthetic Chemistry (MoE), Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-sen University, 510006, Guangzhou, China.
Angewandte Chemie (International ed. in English)
|June 16, 2023
概括
锡矿太阳能电池克服了毒性问题,但存在缺陷. 使用异质盐的新策略补偿了电子和缺陷,提高了46%的效率,并实现了创纪录的1.013V光伏.
科学领域:
- 材料科学 材料科学 材料科学
- 可再生能源可再生能源是可再生能源.
- 太阳能光伏发电是如何实现的
背景情况:
- 锡 (Sn) 矿太阳能电池为以为基础的光伏提供了一个无毒的替代方案.
- 挑战包括严重的p-doping和空缺缺陷,阻碍性能.
- 这些缺陷导致界面能量调整不良和重组损失.
研究的目的:
- 开发一种策略,同时调节Sn perovskites中的电子结构和缺陷配置文件.
- 为了解决基于Sn的太阳能电池中严重的p-doping和空缺缺陷.
- 为了提高Sn矿太阳能电池的效率和光伏.
主要方法:
- 纳入微量 (0.1mol%) 的异质金属化物盐.
- 协同的"电子和缺陷补偿"战略.
- 修改后的Sn矿膜和太阳能电池设备的表征.
主要成果:
- 改变了从重型p型到弱型p型的兴奋剂,使费米水平上升了约0.12 eV.
- 减少了接口电荷提取障碍,抑制了重组损失.
- 获得了14.02%的冠军效率,比控制 (9.56%) 增加了46%.
- 实现了1.013V的光伏记录,电压缺陷最小为0.38 eV.
结论:
- "电子和缺陷补偿"战略有效地提高了Sn矿太阳能电池的性能.
- 这种方法显著减少了非辐射重组,并改善了电荷提取.
- 取得的结果缩小了基于Sn和Pb的太阳能电池之间的性能差距.
相关概念视频
P-N junction
590
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
590
Voltaic/Galvanic Cells
57.8K
Spontaneous Chemical Reactions
Spontaneous redox reactions occur abundantly in nature. The chemical reaction occurring in a disposable AA battery powering our remote controls is one such example of a spontaneous redox reaction. Another example is the immersion of coiled copper wire into an aqueous silver nitrate solution. The reaction shows a gradual, visually impressive color change from colorless to bright blue and the formation of a grey precipitate on the copper wire. In this experiment,...
Spontaneous redox reactions occur abundantly in nature. The chemical reaction occurring in a disposable AA battery powering our remote controls is one such example of a spontaneous redox reaction. Another example is the immersion of coiled copper wire into an aqueous silver nitrate solution. The reaction shows a gradual, visually impressive color change from colorless to bright blue and the formation of a grey precipitate on the copper wire. In this experiment,...
57.8K
Carrier Generation and Recombination
636
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
636
Biasing of P-N Junction
621
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
621
Biasing of Metal-Semiconductor Junctions
288
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
288
Schottky Barrier Diode
403
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
403


