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在HR-TEM和HR-STEM晶体图像上的应变和位移场的定量映射与虚拟格子的引用
N Cherkashin1, A Louiset1, A Chmielewski1
1CEMES-CNRS and Université de Toulouse, 29 rue Jeanne Marvig, BP 94347, 31055 Toulouse Cedex 4, France.
Ultramicroscopy
|June 17, 2023
概括
一种新的方法,绝对应变 (AbStrain),在电子显微镜图像中量化原子级应变. 它克服了以前技术的局限性,使得复杂材料如铁电异构结构的精确分析成为可能,而不需要参考格子.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 电子显微镜电子显微镜
背景情况:
- 准确的应变分析对于理解材料特性至关重要.
- 像几何相位分析这样的现有方法在分析复杂结构方面存在局限性.
- 高分辨率传输电子显微镜 (HR-TEM) 和HR-STEM提供了原子级成像能力.
研究的目的:
- 为HR-TEM和HR-STEM图像开发一种新的互惠空间处理方法.
- 为了能够精确量化和绘制应变组件,平面间距离和角度.
- 克服现有应变分析技术的局限性,特别是复杂材料.
主要方法:
- 开发"绝对应变" (AbStrain) 方法用于相互空间分析.
- 数学形式主义用于纠正HR-TEM和HR-STEM特有的图像扭曲.
- 介绍了"相对位移"方法,用于分析多原子晶体中的子晶格结构.
- 将AbStrain和相对位移应用于HR-STEM对铁电异构结构的图像.
主要成果:
- AbStrain允许量化和映射平面间距离,角度,位移场和应变张力元件.
- AbStrain允许直接分析,而不需要参考格子边缘.
- 相对位移成功地提取了子格子边缘,并测量了原子柱位移.
- 对功能性氧化物铁电异构结构的成功应用.
结论:
- AbStrain和相对位移为电子显微镜中应变分析提供了先进的功能.
- 这些方法提供了精确的,经过扭曲校正的原子级应变的测量.
- 这些技术适用于复杂的晶体材料,包括多原子晶体和异构结构.
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