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Updated: Jul 26, 2025

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
11:10

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

Published on: May 23, 2018

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基于二氧化物从绝缘体到金属相变的高调节负差电阻装置

Jong-Hyun Kim1, Seung-Geun Kim1, Seung-Hwan Kim2

  • 1Department of Semiconductor Systems Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul 02841, Korea.

ACS applied materials & interfaces
|June 20, 2023
PubMed
概括

这项研究引入了一种新的绝缘器到金属相位过渡 (IMT) 装置,用于负差电阻 (NDR),克服了带到带道 (BTBT) 装置的局限性. 基于二氧化瓦纳 (VO2) 的设备实现了高级电子设备的高性能和可调性.

关键词:
从绝缘体到金属的过渡负差异电阻的负差异电阻峰值电流密度 峰值电流密度峰值到谷地电流比率的比率.二氧化瓦纳二氧化是什么

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