可控制的混合型等离子体集成电路
Maryam Khodadadi1, Seyyed Mohammad Mehdi Moshiri1, Najmeh Nozhat2
1Department of Electrical Engineering, Shiraz University of Technology, Shiraz, Iran.
Scientific reports
|June 20, 2023
概括
这项研究引入了一种可控制的新型混合型等离子集成电路 (CHPIC) 用于光学无线通信. 设计的CHPIC证明了在芯片间/芯片内部光学互连中高效的功率分割和信号传输.
科学领域:
- 光子学和等离子学.
- 集成光学 集成光学 集成光学
- 纳米技术纳米技术
背景情况:
- 混合等离子集成电路 (CHPIC) 对于先进的光通信系统至关重要.
- 现有的设备缺乏高效的控制和集成功能,以实现高速数据传输.
- 纳米天线技术为小型化和高性能光学元件提供了潜力.
研究的目的:
- 设计和研究一种可控制的新型混合型等离子集成电路 (CHPIC).
- 探索单个组件的功能,包括纳米天线,分离器和传感器.
- 评估CHPIC在光学无线通信和芯片对芯片互连方面的性能.
主要方法:
- 有限元法 (FEM) 用于全面的设备功能分析.
- 基于混合等离子波导 (HPW) 的组件的设计和模拟.
- 使用光子和等离子波导的CHPIC的集成和性能评估.
- 基于HPW的纳米天线的无线传输链路的研究.
主要成果:
- 首次成功设计和研究了一种新型的CHPIC.
- 展示基于石墨烯的1x3功率分割器,可切换输出用于功率控制.
- 对CHPIC与光子和等离子波导集成的分析,用于各种激发.
- 在193.5 THz的无线传输中,实现了10 dB的最大增益和10.2 dBi的定向性.
结论:
- 拟议的CHPIC为光通信提供了可控制和集成的解决方案.
- 该设备在最先进的等离子体设备上表现出显著的优势.
- CHPIC适用于光学无线通信和芯片间/芯片内光学互连的应用.
相关概念视频
01:29Field Effect Transistor
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
01:20Design Example: Capacitance Multiplier Circuit
In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
01:25MOS Capacitor
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
01:22MOSFET: Enhancement Mode
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...