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CMOS兼容的/超快速近红外光探测器
Linlin Li1,2, Hao Xu1, Zhexin Li1,2
1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Small (Weinheim an der Bergstrasse, Germany)
|June 21, 2023
概括
研究人员开发了一种新的/异联光探测器,用于改进近红外传感. 这一进步增强了光响应,并使人工视觉系统能够进行高对比度成像.
科学领域:
- 材料科学 材料科学 材料科学
- 光电学是指光电子产品.
- 纳米技术纳米技术
背景情况:
- (Si) 光探测器在近红外 (NIR) 探测方面面临局限性,原因是宽带间隙和材料不兼容.
- 开发具有广泛光谱的小型化,集成的NIR探测器对于遥感等应用仍然具有挑战性.
研究的目的:
- 为了实现大面积 (Te) 光电子单元与的单体集成.
- 为了利用Te/Si II型异质连接来提高光探测器的性能.
- 展示高对比光电成像及其在人工视觉中的应用.
主要方法:
- 磁铁子喷射技术用于单立体整合和.
- 在和之间构建了一种II型异质连接.
- 一个20x20像素的成像阵列是使用Te/Si异质连接制造的.
主要成果:
- Te/Si异质连接有效地分离了光生成的载体,延长了载体的寿命,并显著提高了光响应.
- 光探测器表现出卓越的检测能力和超快的启动时间.
- 使用Te/Si阵列实现了高对比度光电成像,在随后的人工神经网络处理中表现优于Si阵列.
结论:
- 开发的Te/Si异质连接光探测器为NIR传感和成像提供了卓越的性能.
- 这种集成克服了传统探测器的局限性,为先进的光电子设备铺平了道路.
- 高对比度成像能力提高了人工视觉系统的效率和准确性.
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