灵活的配氧化铁电突触装置用于神经形态计算
Zhenhai Li1,2, Tianyu Wang1,2, Jialin Meng1,2
1School of Microelectronics, Fudan University, Shanghai 200433, P. R. China. tywang@fudan.edu.cn.
Materials horizons
|June 21, 2023
概括
在基板上的氧化 (HfAlO) 铁电薄膜在曲后呈现降解性质. 裂形成会导致疲劳损伤,但HfAlO设备显示了神经形态计算和数字识别的潜力.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 纳米技术纳米技术
背景情况:
- 基于氧化 (HfO2) 的铁电道结点对于高速,低功耗电子设备至关重要.
- 研究这些设备在应力下的机械稳定性对于实际应用至关重要.
研究的目的:
- 为了检查基基板上合HfO2 (HfAlO) 薄膜曲对铁电特性的影响.
- 了解疲劳机制,并评估HfAlO在神经形态计算方面的潜力.
主要方法:
- 沉积HfAlO铁电薄膜在石 (米卡) 基板上.
- 制造一个Au/Ti/HfAlO/Pt/Ti/Mica设备结构.
- 循环曲试验 (1000个循环) 和有限元分析,以研究疲劳和损伤.
主要成果:
- 在1000个曲周期后,铁电特性和疲劳特性显著降低.
- 有限元分析确定裂纹形成是临界曲直径下疲劳损伤的主要原因.
- 基于HfAlO的设备展示了有效的神经形态计算能力,模仿生物突触,在数字识别中达到88.8%的准确性.
结论:
- 机械应力,特别是曲,对HfAlO铁电器件的性能和耐用性产生重大影响.
- 裂形成是一个关键的故障机制,限制了机械应变下的设备寿命.
- HfAlO铁电膜对开发先进的神经形态计算硬件具有前景.
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