相关实验视频

Updated: Jul 26, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.6K

通过在门电压下的气和氧气迁移来控制 CoGd 膜中的补偿温度

Xue Ren1, Liang Liu1, Bin Cui1

  • 1School of Physics, State Key Laboratory for Crystal Materials, Shandong University, Jinan 250100, People's Republic of China.

Nano letters
|June 22, 2023
PubMed
概括

离子液体门电气控制 CoGd 异构体中的磁性,使得电压诱导的磁化切换和磁性补偿温度的大变化.

关键词:
补偿温度的补偿温度是什么电气控制磁场的电气控制.铁磁主义是铁磁性的.离子迁移的离子迁移离子电子电子学 离子电子学

更多相关视频

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.7K
Writing and Low-Temperature Characterization of Oxide Nanostructures06:43

Writing and Low-Temperature Characterization of Oxide Nanostructures

Published on: July 18, 2014

10.1K

相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
284
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
326