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Updated: Jul 27, 2026

Indirect Fabrication of Lattice Metals with Thin Sections Using Centrifugal Casting
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通过电线弧定向能量沉积的辐射双金属结构,基于增材制造的增材制造

Lile Squires1, Ethan Roberts1, Amit Bandyopadhyay2

  • 1W. M. Keck Biomedical Materials Research Lab, School of Mechanical and Materials Engineering, Washington State University, Pullman, WA, 99164-2920, USA.

Nature communications
|June 22, 2023
PubMed
概括

使用线弧增材制造 (WAAM) 进行双金属结构的增材制造现在具有辐射接口. 与单一材料件相比,这种新的方法可以提高33-42%的压力强度.

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相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...