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用物理化学方法模拟超高剂量速率电子和质子FLASH效应

Hai Siong Tan¹, Kevin Boon Keng Teo¹, Lei Dong¹

¹University of Pennsylvania, Perelman School of Medicine, Department of Radiation Oncology, Philadelphia, United States of America.

Physics in medicine and biology

|June 23, 2023

概括

这项研究验证了一种解释FLASH效应的物理化学模型,表明超高剂量率可以降低有害基因度,节省正常组织. 这表明较低的基因暴露是FLASH放射治疗的关键.

科学领域:

放射化学放射化学是指辐射化学.
辐射生物学辐射生物学
医学物理医学物理

背景情况:

闪光效应是超高剂量率 (UHDR) 放射治疗中的一个现象,它提供了正常的组织节约.
基于放射化学动力学的物理化学模型被提出来解释FLASH效应.

研究的目的:

对氧气耗尽和FLASH实验进行广泛的模拟和审查物理化学模型的适用性.
通过各种实验参数,研究模型与质子和电子束的性能.

主要方法:

偶联的非线性普通微分方程的数值解,规范放射化学动力学.
使用剂量和光束传递参数计算激素度的曲线下的面积 (AUC).
模拟的AUC差异与实验生物终点和氧气耗尽数据的比较.

主要成果:

模拟的AUC差异与FLASH效应相关,显示在UHDR下激素度降低.
模拟准确地预测了在全脑辐射中保存记忆的门剂量率.
在质子FLASH实验中,在激进AUC和生物终点 (TGF-β1,腿缩,IL-6) 之间发现了线性相关性.

结论:

物理化学模型有效地解释了FLASH效应,通过将UHDR与减少激素暴露联系起来.
在FLASH放射治疗中,正常组织的节约可能归因于过氧和超氧化基度的降低.
该模型的发现与对氧气耗尽和对正常与瘤组织的差异影响的实验观测一致.

关键词:

闪光效应 (FLASH) 是一种闪光效应.物理化学模型物理化学模型超高剂量率辐射的超高剂量率辐射.

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