在室温范德瓦尔斯磁铁中通过替代性金属合物增强巨大的强制性
Hyo-Bin Ahn1, Soon-Gil Jung2, Hyungjong Lim3
1SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 16419, Korea.
Nanoscale
|June 26, 2023
概括
兴奋剂显著增强2D铁磁Fe3GaTe2中的强制场,增强其用于室温自旋电子装置的潜力. 这项研究展示了调整范德瓦尔斯材料磁性质的关键方法.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
背景情况:
- 像Fe3GeTe2这样的二维 (2D) 范德瓦尔斯 (vdW) 铁磁 (FM) 金属对于开发所有2D自旋电子设备至关重要.
- Fe3GaTe2具有较高的基里温度 (350-380 K),使其成为室温应用的有希望的材料.
- 替代性兴奋剂是一种已知的策略,用于设计vdW磁铁的磁性.
研究的目的:
- 为了研究 (Ni) 替代铁 (Fe) 对Fe3GaTe2的磁性特性的影响.
- 探索Ni兴奋剂在2D vdW FM金属中增强强制场 (Hc) 的潜力.
- 评估在室温下运行的基于Fe3GaTe2的自旋电子装置的可行性.
主要方法:
- 合成 (Fe1-xNix) 3GaTe2晶体,其度 (x) 具有不同的Ni兴奋剂.
- 磁性性能测量,包括里温度 (TC) 和强制场 (Hc),作为Ni的函数.
- 分析磁性异构性能量,以了解Hc增强背后的机制.
主要成果:
- 尼兴奋剂显著增强了Fe3GaTe2中的强制场 (Hc),在x = 0.03.03时增加了约200%.
- 在x = 0.12时,Hc增加到7kOe,这是报告中的最高值,而TC随着Ni含量增加而下降.
- 铁磁状态在x = 0.68时被抑制,导致了旋转玻璃状态,表明Ni兴奋剂的极限.
结论:
- 替代性Ni兴奋剂是一种有效的方法,可以显著增强2D vdW FM Fe3GaTe2的强制场.
- 观察到的Hc的增强归因于由Ni原子诱导的域固定,由降低的磁性异构性能量支持.
- 这些发现为制造基于Fe3GaTe2的自旋电子设备铺平了道路,在室温下提高了性能.
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