印度中的多态和铁电性 (III) 化
Clement Kok Yong Tan1, Wei Fu2, Kian Ping Loh3
1NUS Graduate School - Integrative Sciences & Engineering Programme (ISEP), National University of Singapore, Singapore 117543, Singapore.
Chemical reviews
|June 26, 2023
概括
二维 (III) 化物 (In2Se3) 呈现多种相位,对于先进的铁电和记忆器件至关重要. 区分这些多态体是释放它们在下一代电子产品中的全部潜力的关键.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 固态化学 固态化学
背景情况:
- 二维 (III) 化物 (In2Se3) 是一个有前途的铁电半导体.
- 它的单层铁电性为超越·诺伊曼架构的高密度内存设备提供了潜力.
- 在区分In2Se3多态,特别是alpha-In2Se3和beta-In2Se3方面存在挑战,阻碍了研究.
研究的目的:
- 为了提供一个综合的印度 (III) 化物 (In2Se3) 多态和多类型的综合审查.
- 讨论 In2Se3 阶段严格区分的方法.
- 突出In2Se3相在铁电和内存设备中的近期应用.
主要方法:
- 关于In2Se3多态性的现有研究的文献综述.
- 对In2Se3.3的相位识别技术的分析.
- 汇编了基于In2Se3的设备应用的最新进展.
主要成果:
- 在In2Se3中表现出丰富的多态性,其中α-In2Se3在单层层保持铁电性.
- β-In2Se3包括像β-In2Se3.3这样的抗铁电和铁弹性多态体.
- 了解相位转换对于电阻式内存存储中的应用至关重要.
结论:
- 可以实现In2Se3多态和多类型的严格分化.
- 这些阶段对先进的铁电和内存设备应用有很大的潜力.
- 对相位过渡的进一步研究将使新的电子功能成为可能.
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