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Updated: Jul 25, 2025

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
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调整氧化物属性通过控制生长和化期间的氧空隙

Tristan Steegemans1, Shinhee Yun1, Carlos N Lobato1

  • 1Department of Energy Conversion and Storage, Technical University of Denmark.

Journal of visualized experiments : JoVE
|June 26, 2023
PubMed
概括

控制氧化物材料中的氧含量调整电气性质. 有两种方法,即脉冲激光沉积和增长后化,可以精确控制SrTiO3异构中的载体密度.

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相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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