多级电阻Al/Ga2O3/ITO开关装置与石墨烯氧化物的中间层用于神经形态计算
Li-Wen Wang1, Chih-Wei Huang2, Ke-Jing Lee2,3
1Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan.
Nanomaterials (Basel, Switzerland)
|June 27, 2023
概括
这项研究展示了一种新型的双层氧化物RRAM设备,能够进行两位存储,显著提高大数据应用的数据密度. 石墨烯氧化物结构提高了电气性能和可靠性.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体物理 半导体物理
背景情况:
- 电阻随机存取内存 (RRAM) 对于高密度存储和内存计算至关重要.
- 传统的双态RRAM在满足大数据存储需求方面面临限制.
- 氧化是第四代半导体,由于其特性,它为先进的电子设备提供了潜力.
研究的目的:
- 研究Al/石墨烯氧化物 (GO) /Ga2O3/ITO RRAM在多层细胞应用中的潜力.
- 为了证明在双层RRAM结构中实现两位存储的可行性.
- 分析开发的RRAM设备的电气性能,可靠性和传输机制.
主要方法:
- 使用Al/石墨烯氧化物 (GO) /Ga2O3/ITO结构制造双层RRAM设备.
- 描述设备的电阻开关行为和电气性能.
- 耐久性分析,开/关比,以及导线模型,以了解传输机制.
主要成果:
- 成功展示了Al/graphene oxide (GO) /Ga2O3/ITO RRAM,并有可能进行两位存储.
- 与单层设备相比,双层结构具有优越的电气性能和稳定的可靠性.
- 实现的耐用性超过100个开关周期,启/关比大于10^3.3.
- 为了阐明电荷传输机制,开发了光纤模型.
结论:
- 开发的双层氧化物RRAM显示出对高密度数据存储的重大前景.
- 氧化石墨烯的整合提高了RRAM设备的性能和可靠性.
- 这项研究为大数据时代的非易失性内存技术的进步做出了贡献.
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