分子动力学研究化辐射损伤的机制由阿尔法粒子
Yang Liu1,2,3, Zhenpeng Xiong1, Xiaoping Ouyang1,3
1School of Nuclear Science and Engineering, North China Electric Power University, Beijing 102206, China.
Materials (Basel, Switzerland)
|June 28, 2023
概括
化 (GaN) 探测器在阿尔法粒子辐射下经历了性能变化. 分子动力学模拟显示,更高的能量和多次注射会导致GaN材料的结构损坏和自我修复能力降低.
科学领域:
- 材料科学 材料科学 材料科学
- 核工程 核工程是指核工程.
- 半导体物理 半导体物理
背景情况:
- 化 (GaN) 探测器对于核反应堆和深空应用至关重要.
- 这些探测器由于α粒子辐射而面临退化,影响其性能.
- 了解GaN在辐射下物质特性变化对于探测器可靠性至关重要.
研究的目的:
- 为了研究在阿尔法粒子辐射下GaN的移位损伤机制.
- 探索不同的事件能量和剂量如何影响GaN的结构完整性.
- 分析GaN在辐射后的自我修复能力.
主要方法:
- 使用LAMMPS代码进行分子动力学 (MD) 模拟.
- 在0.1和0.5 MeV的单个α粒子冲击的模拟.
- 模拟的多个α粒子注射剂量为2×10^12和4×10^12离子/厘米^2在300K的模拟.
主要成果:
- 在0.1MeV时,GaN显示了~32%的重组效率,缺陷集群在125年内.
- 在0.5MeV时,重组效率降至~26%,而位于125 Å外的集群则降至~26%.
- 多次注射导致了更大的无形区域 (27.3%31.9%) 和耗尽的自我修复能力.
结论:
- 阿尔法粒子能量影响了GaN的缺陷分布和重组效率.
- 多重粒子注射严重降低了GaN结构,导致显著的无形化.
- 高剂量的α粒子辐射压倒了GaN的自我修复能力,损害了探测器的完整性.
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